Examines on-resistance and reliability in SiC power MOSFETs, indicating potential improvements.
On-resistance–reliability tradeoffs are investigated for SiC power MOSFETs using Al2O3/LaAlO3/SiO2 gate dielectrics. Due to the high gate capacitance, the Al2O3/LaAlO3/SiO2 gate device shows an improvement on the channel resistance ( <tex-math notation="LaTeX">Rch </tex-math> ) versus threshold voltage shift ( <tex-math notation="LaTeX">Δ Vₜₕ </tex-math> ) tradeoff compared to the SiO2 gate counterpart. Besides, the short-circuit withstand time of the Al2O3/LaAlO3/SiO2 gate device is 1.55 times longer than that of the SiO2 gate device, while the two devices have the same on-resistance. Furthermore, the predicted lifetime of the Al2O3/LaAlO3/SiO2 gate device is ten years at an effective electric field ( <tex-math notation="LaTeX">Eeff </tex-math> ) of 4.8 MV/cm, which is comparable with the latest reported result of the SiO2 gate counterpart.
No takes yet. Share an insight, caveat, or question.
Huang et al. (2022) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: