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Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS 2 field‐effect transistors is reported via the encapsulation of ReS 2 nanosheets in a high‐ κ Al 2 O 3 dielectric environment. Low‐temperature transport measurements allow to observe a direct metal‐to‐insulator transition originating from strong electron–electron interactions. Remarkably, the photodetectors based on ReS 2 exhibit gate‐tunable photoresponsivity up to 16.14 A W −1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe 2 , GaS, and GaSe‐based photodetectors. This study unambiguously distinguishes ReS 2 as a new candidate for future applications in electronics and optoelectronics.
Zhang et al. (Fri,) studied this question.