Reliability degradation of ultra-thin oxynitride and Al ₂ O ₃ gate dielectric films owing to heavy-ion irradiation

The charge-to-breakdown of 3.3 nm oxynitride films shows significant degradation after irradiation with 342 MeV Au ions. In contrast, 5.4 nm Al2O3 films exhibit much less degradation for similar heavy-ion stress.