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Bipolar resistive switching was found in thin polycrystalline TiO2 films formed by the thermal oxidation of sputtered Ti films. With a Ag top electrode, TiO2 film, and Pt bottom electrode, bistable resistive switching with a low operating voltage and a good uniformity was observed repeatedly without an initial electrical “forming” process. This switching phenomenon might be described as the formation and rupture of a filamentary conductive path consisting of a chain of Ag atoms. The temperature dependence of the switching voltage is discussed in terms of interstitial ionic diffusion of Ag in the TiO2 matrix.
Tsunoda et al. (Mon,) studied this question.