Answers are grounded in this paper and cite their sources.
The high-pressure behavior of the direct and indirect band gaps in zinc-blende-structure SiC is examined with use of self-consistent ab initio pseudopotential calculations. The fundamental band gap from Γ₁₅ᵛ to X₁ᶜ is found to decrease linearly with pressure up to 200 kbar. This result disagrees with a recent experimental finding of strong sublinear behavior at pressures of 10 to 15 kbar. The linear pressure coefficients of the fundamental band gap and the transverse-optical-phonon frequency at the {Γ} point in the Brillouin zone are in good agreement with measured values.
No takes yet. Share an insight, caveat, or question.
Cheong et al. (1991) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: