Migration of anion and cation vacancies on GaAs(110) has been examined with scanning tunneling microscopy. Striking asymmetries are found in the direction and bias-polarity dependence of the migration probability that signal the importance of both bonding topology at the surface and bulk doping. These asymmetries indicate vacancy motion is driven by recombination of carriers injected via the STM tip with carriers from the bulk. The impact-parameter dependence of the reaction cross section shows this injection occurs through resonant tunneling into dangling-bond defect states.
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Lengel et al. (1996) studied this question.
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