We are dealing with the problem of the charge distribution within an insulator (present application: SiO 2 ) which is bombarded by a narrow electron beam. The electron trajectories within the sample are simulated via a single diffusion Monte‐Carlo method. A mathematical model is proposed for the potential and the charge density. The development of an electric field, a potential and the broadening of the incident beam are taken into account. These two last distributions appear to have a prominent effect. It is shown that the charge distribution tends to a double layer; the shape and thickness of positive and negative distributions are given.
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Vicario et al. (1994) studied this question.
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