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The motion of quasi-free electrons in SiO2 is simulated by means of the Monte-Carlo-method and the Fröhlich theory of the electron—LO-phonon scattering. From the field dependence of the drift velocity an electron mobility of μ ≈ 20 cm2/Vs is deduced. The energy distributions of hot electrons indicate an electronic breakdown at the field strength F0 ≈ 2 × 106 V/cm. For higher excited electrons with initial energies E0 ≈ (1 to 5) eV a “partial breakdown” even at lower field strength F < F0 is observed.
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Fitting et al. (1982) studied this question.
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