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Linear magnetoresistance is an important attribute for magnetic sensor design in space applications, three-dimensional detection of the magnetic field, and high field measurements. Here we demonstrate that a large linear magnetoresistance of up to 22% can be achieved in a magnetic tunnel junction that consists of two ferromagnetic layers, one with out of plane and one with in-plane magnetic anisotropy. The tunneling magnetoresistance with the electrical current perpendicular to the film plane and the magnetic configuration of the device are analyzed.
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Wei et al. (2009) studied this question.
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