Angle-resolved ultraviolet photoemission has been applied to the investigation of the surface electronic structure of InSb(110). Strong emission from surface states has been observed at k_∥ values around X̄ at ~ 1 and ~ 3.1 eV binding energy and for k_∥=1/2k_X̄^'M̄ at ~ 0.9, ~ 2.7, and ~ 5 eV with respect to the top of the valence band. The experimentally determined dispersion of the surface states is in reasonable agreement with scattering-theoretical-model calculations of the relaxed InSb(110) surface.
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Höchst et al. (1984) studied this question.
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