Surface-state energies for ZnSe(110) and GaAs(110) are calculated for a variety of surface atomic geometries. Comparison with photoemission data for ZnSe(110) reveals that a top-layer bond-length-conserving rotation of ω₁=29^∘ rather than ω₁=4^∘ occurs. For both ZnSe(110) and GaAs(110) the surface-state energies are shown to be insensitive to the magnitudes of atomic displacements parallel to the surface.
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Mailhiot et al. (1984) studied this question.
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