Bremsstrahlung isochromat spectroscopy has been employed to measure the density of unoccupied electronic states on GaAs(110). The experiment was carried out at a quantum energy of 70 eV, resulting in a maximum of surface sensitivity. The theoretically predicted empty surface states B₁^', S₁^', B₂^' and S₂^', are identified. Their energetic positions as well as relative strengths are in excellent agreement with calculations based on the bond-relaxation model. A binding energy of 1.0 eV for the Ga $3d$ surface exciton is obtained.
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Dose et al. (1981) studied this question.