Dynamic Ionic Defect-Passivation (DIDP) Nano-Circuit Lossless Conduction Architecture Experimental Validation Proposal

As semiconductor fabrication advances toward 3 nm nodes and beyond, the industry faces fundamental physical limitations imposed by electron scattering and thermal dissipation. Measured data show that copper interconnect resistivity at the 7 nm node has reached approximately 10⁻ ⁷ Ω·m — nearly six times the bulk copper value — and theoretical projections suggest a further deterioration of eight- to tenfold at the 3 nm node. Conventional static-material improvement strategies have proven incapable of fundamentally resolving resistive losses caused by lattice defects. This proposal introduces a novel design philosophy: rather than relying on a single perfect material to achieve room-temperature superconducting characteristics, it combines the properties of multiple materials so that each material eliminates one specific loss mechanism, driving the overall system toward near-zero loss in an engineering sense. Four independent, sequentially verifiable experimental stages are presented alongside a three-phase roadmap leading to chip-circuit integration validation. We sincerely invite your laboratory to evaluate the academic feasibility of this framework and to consider undertaking the corresponding experimental verification.