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December 12, 2002Applied Physics Letters

Spin-memory loss at 4.2 K in sputtered Pd and Pt and at Pd/Cu and Pt/Cu interfaces

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Authors

HKHüseyin KurtIstanbul Aydın UniversityRLR. LoloeeMichigan State UniversityKEKhalid EidBirzeit University

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Implication

Experimental study reveals spin-memory loss and spin-diffusion lengths in sputtered palladium and platinum junctions, highlighting significant spin depolarization at copper interfaces.

Key Points

  • To determine the low-temperature spin-diffusion lengths of sputtered palladium and platinum and quantify spin-memory loss at their respective interfaces with copper.
  • Characterized sputtered thin films and multilayer junctions of Pd, Pt, and Cu at 4.2 K.
  • Calculated spin-diffusion lengths, interface specific resistances, and interfacial spin-memory loss parameters, comparing findings to neighboring periodic table transition metals (Nb and W).
  • Spin-diffusion lengths at 4.2 K were 25 (+10/-5) nm for sputtered Pd and 14 ± 6 nm for sputtered Pt.
  • Interface specific resistances were measured at 0.9 ± 0.1 fΩ m² for Pd/Cu and 1.5 ± 0.1 fΩ m² for Pt/Cu.
  • Spin-memory loss parameters were determined to be 0.24 (+0.06/-0.03) at Pd/Cu interfaces and 0.9 ± 0.1 at Pt/Cu interfaces.

Cite This Study

Kurt et al. (2002) studied this question.

synapsesocial.com/papers/6a66a3ed3d7efc4250c87531https://doi.org/10.1063/1.1528737
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