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Tungsten-doped vanadium dioxide (VO 2 ) nanopowders were synthesized by thermolysis of (NH 4 ) 5 (VO) 6 (CO 3 ) 4 (OH) 9 ·10H 2 O at low temperature with, to the best of our knowledge, active white powdery tungstic acid (WPTA) used as a substitutional dopant for the first time. The change in electrical resistance due to the semiconductor−metal transition was measured from −5 to 150 °C by the four-probe method. Differential scanning calorimetry and the resistance−temperature curve of the nanopowders indicated that the phase transition temperature of VO 2 powders was 67.15 °C, but for W-doped VO 2, the temperature was reduced to 26.46 °C. The results indicated that WPTA was found to be exceptionally effective as a dopant for reducing the transition temperature.
Peng et al. (Sun,) studied this question.