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October 1, 2000Chemical Vapor Deposition

The Use of Bismuth(III) Dithiocarbamato Complexes as Precursors for the Low-Pressure MOCVD of Bi2S3

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Authors

OMOlinda C. MonteiroUniversity of LisbonTTTito TrindadeUniversity of AveiroJPJ.-H. Park

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Monteiro et al. (2000) studied this question.

synapsesocial.com/papers/6a6a1d34c404069aaef151b2https://doi.org/10.1002/1521-3862(200010)6:5<230::aid-cvde230>3.0.co;2-p
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