Strain-gated logic devices are important for the development of advanced flexible electronics. Using a dual-monolayer-promoted film-transfer technique, flexible multilayer structures capable of undergoing large compressive deformation are prepared. Formation of a crease in the gap between electrodes at a geometrically tunable strain leads to the formation of an electrical connection in a reversible and reproducible fashion.
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Xu et al. (2014) studied this question.
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