Epitaxial films of layered GaSe with (0001) surfaces have been grown on GaAs(001) substrates in spite of the large difference in their crystal symmetry. In situ observation of reflection high-energy electron diffraction has revealed that a number of facets grow on the surface of GaAs(001) under Se irradiation. The existence of those facets is essential to the single-domain growth of a layered GaSe film on a GaAs(001) surface.
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Abe et al. (1993) studied this question.