Randomized trial measures single event upsets in SRAM devices, indicating reliable data correlation with models.
The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates.
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Barak et al. (2000) studied this question.
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