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July 30, 2026Applied Surface Science AdvancesOpen Access

Interface-engineered TiO2/MoO3 bilayer memristor with MoN electrode for stable and low-voltage neuromorphic applications

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Authors

AKAmir Sohail KhanSKSobia Ali KhanAAArooj Ali

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Overview

Randomized trial shows stable resistive switching in a memristor, indicating promise for neuromorphic applications.

Key Points

  • The aim is to develop a stable memristor using TiO2/MoO3 for neuromorphic computing based on brain-inspired architectures.
  • Fabrication of TiO2/MoO3 bilayer memristor using RF magnetron sputtering.
  • Assessment of resistive switching stability through 500 DC I-V cycles.
  • Evaluation of synaptic functions including long-term potentiation/depression.
  • Demonstrated stable nonvolatile resistive switching with a low read voltage of +0.7 V.
  • Achieved over 10,000 seconds of data retention and reliable operation at temperatures up to 150 °C.
  • Exhibited a high classification accuracy of 98% on the MNIST dataset in deep learning applications.

Cite This Study

Khan et al. (2026) studied this question.

synapsesocial.com/papers/6a6af4ad60e2b924d3ea03c1https://doi.org/10.1016/j.apsadv.2026.101036
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