Measures carrier lifetime in a type-II superlattice, indicating effective optical methodologies.
An optical phase-shift technique is demonstrated to measure the carrier lifetime of an InGaAs/GaAsSb type-II superlattice as a function of excess carrier density, showing good agreement with time-resolved photoluminescence data at low excitation. At 77 K, the minority-carrier lifetime is 369 ns.
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Petluru et al. (2026) studied this question.
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