Room temperature ferromagnetic n-type semiconductor in (In1−xFex)2O3−σ

The thin film synthesis and characterization of room temperature ferromagnetic semiconductor (In1−xFex)2O3−σ are reported. The high thermodynamic solubility, up to 20%, of Fe ions in the In2O3 is demonstrated by a combinatorial phase mapping study where the lattice constant decreases almost linearly as Fe doping concentration increases. Extensive structural, magnetic and magneto-transport including anomalous Hall effect studies on thin film samples consistently point to a source of magnetism within the host lattice rather than from an impurity phase.