High drain field impact ionization transistors as ideal switches

Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec−1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device drain, contradicting the low energy operation purpose. Here, we report a vertical subthreshold swing device composed of a graphene/silicon heterojunction drain and a silicon channel. This structure creates a low voltage avalanche impact ionization phenomenon and leads to steep switching of the silicon-based device. Experimental measurements reveal a small average subthreshold swing of 16 µV dec−1 over 6 decades of drain current and nearly hysteresis-free, and the operating voltage at which a vertical subthreshold swing occurs can be as low as 0.4 V at room temperature. Furthermore, a complementary silicon-based logic inverter is experimentally demonstrated to reach a voltage gain of 311 at a supply voltage of 2 V. Yuan et al. report a nearly vertical subthreshold swing field-effect transistor consists of a graphene/silicon heterojunction drain and a silicon channel. The device enables nearly hysteresis-free transistors with subthreshold swing of 16 µV dec−1, and a complementary logic inverter with gain of 311.