The combined effects of shunt and luminescence coupling on the measurement artifact of external quantum efficiency (EQE) of multi-junction solar cells are studied. The EQE measurement artifact is modeled using DC and small-signal equivalent circuits under voltage and light bias conditions. The modeling results are verified with EQE measurements of a Ge bottom cell of a triple-junction solar cell. It is found that the optimal bias light intensity to minimize the EQE measurement artifact is the result of the tradeoff between the shunt and the luminescence coupling effects.
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Li et al. (2011) studied this question.
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