The interface barrier heights of an In2O3-SiO2-Si structure have been studied in an internal pjotoemission experiment. A barrier height of 4.05 eV has been found for the In2O3(thermally evaporated)-SiO2 inrerface, Using the published electron affinity of SiO2, 0.95 eV, the work function of the thermally evaporated In2O3 film is determined to be 5.0 eV. This result is in excellent agreement with the value deduced from the C-V measurements performed on In2O3-Sio2-Si and Al-SiO2-Si metal-oxide-semiconductor (MOS) capacitors fabricated on the same wafer.
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Pan et al. (1980) studied this question.
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