Positron annihilation spectra reveal isolated zinc vacancy (VZn) creation in single-crystal ZnO exposed to 193-nm radiation at 100 mJ/cm² fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the VZn acceptor level at ~100 meV to the conduction band. The observed VZn density profile and hyperthermal Zn⁺ ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon---a novel photoelectronic process for controlled VZn creation in ZnO.
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Khan et al. (2013) studied this question.
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