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Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V(pi)L(pi) of 3.1 V.cm has been obtained at 1.55mum. Numerical simulations show a good agreement between experimental and theoretical index variations.
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Marris‐Morini et al. (2006) studied this question.
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