It is known that the RCA Standard Clean 1, which is used repeatedly during device fabrication, can cause etching of . In some process flows, such etching can be important when fabricating devices with thin films, for example, in silicon‐on‐insulator technology. We show that of is etched away by a modified version of the clean (1:8:64 parts by weight of , , and ), when it is applied for to a bare layer on top of .
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G. K. Celler (1999) studied this question.