Two-dimensional (2D) materials, with atomic thickness and unique electronic structure, hold great potentials in electronic device applications. Charge transfer at the interface of 2D materials further provides a versatile platform for applications in electronics. Here, we report nonvolatile memory devices based on interface charge trapping between 2D WSe 2 and organic electron acceptors. The 2D WSe 2 –organic acceptor hybrid structure exhibits a high storage performance, such as large gate memory windows, high on/off ratios (>10 3 ), and long retention time (>1000 s). Further analysis revealed that organic acceptors with a stronger electron affinity (i.e., higher redox potential) have a larger electron-trapping ability and hence a better memory performance.
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Liu et al. (2019) studied this question.
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