Epitaxial YSi2−x films have been fabricated. The smooth 430-Å-thick silicide films on Si (111) substrates were characterized by a Rutherford backscattering minimum channeling yield χmin =8%, establishing YSi2−x as one of the best known epitaxial silicides. Results of electrical measurements are also presented.
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Gurvitch et al. (1987) studied this question.
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