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This letter reports on the fabrication and characterization of visible-blind ultraviolet photoconductors using single-crystal AlxGa1−xN layers deposited on basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, the long-wavelength cutoff can be varied from 350 to 240 nm. Photoresponsitivities as high as several hundred amperes per watt were measured with 10 μm interelectrode spacing.
Lim et al. (Mon,) studied this question.