Characterization and modeling of a terahertz photoconductive switch

We examine the terahertz (THz) performance of an ErAs:GaAs photoconductive switch under varying bias conditions and optical drive power. Despite THz power up to 287 μW, saturation effects were not seen. In addition, the THz power spectra were measured with a Fourier transform infrared spectrometer, and the roll-off was found to be invariant to bias voltage and consistent with a THz pulsewidth of 1.59 ps and a peak power of 3.1 W. These results are confirmed by a large-signal, high-frequency circuit model that suggests that further increase in THz power and efficiency are possible through an increase in the mode-locked laser power and reduction in its pulse width. The model is useful in designing both the laser and photoconductive switches to maximize available power and efficiency.