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Hematite is a promising material for photoelectrochemical (PEC) water oxidation, but its photocurrent is limited by bulk charge recombination and poor oxidation kinetics. In this study, we report a high-performance Fe 2 O 3 photoanode achieved through gradient surface gallium doping, utilizing a Ga 2 O 3 overlayer on FeOOH precursors via atomic layer deposition (ALD) and co-annealing for Ga diffusion. The Ga-doped layer passivates surface states and modifies the band structure, creating a built-in electric field that enhances the charge separation efficiency. Following the electrodeposition of CoFeO x as a cocatalyst, the resulting CoFe-Ga:Fe 2 O 3 photoanode exhibited a notable negative shift in onset potential by approximately 100 mV, a high photocurrent density of 2.6 mA cm –2 at 1.23 V versus RHE, and excellent long-term PEC stability over 40 h. This work presents an effective strategy for enhancing the PEC performance of photoelectrodes through advanced surface coatings.
Wang et al. (Mon,) studied this question.