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A p-n homojunction GaAs-based photodetector is developed in order to operate in the near field of a subwavelength sized light source. It has a spatial resolution of about 270 nm, limited by diffusion of minority carriers. A detector with a built-in AlGaAs diffusion barrier is also studied, demonstrating an improved resolution of better than 100 nm.
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Kolb et al. (1994) studied this question.
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