Rings around the wire: Novel hierarchical heterostructures, assembled by radial deposition of InAs on GaAs nanowires with nonplanar side walls, result in the formation of InAs nanorings. The mechanism of formation of such structures, determined by transmission electron microscopy, involves the preferential nucleation of InAs at concave regions of the GaAs surface by capillarity effects.
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Paladugu et al. (2008) studied this question.
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