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Coupled plasmon modes have been observed at interfaces of thin (3-100-{}) Al films with CdSe and CdS by low-energy electron energy-loss spectroscopy. The spectral features and their dependence on film thickness demonstrate that chemically reacted layers form at the metal-semiconductor junctions with frequency-dependent dielectric constants which are significantly different from their semiconductor counterparts.
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L. J. Brillson (1977) studied this question.
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