The technique of double evaporation of CdS and S was investigated. A significant increase of resistivity to 107 Ω·cm, and the onset of space-charge-limited current were observed in films made by this technique. It is hypothesized that the improvement noted compared with films from a single source evaporation of CdS is due to the reduction in number of sulfur vacancies.
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F. A. Pizzarello (1964) studied this question.
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