Simple, Inexpensive, and Rapid Approach to Fabricate Cross‐Shaped Memristors Using an Inorganic‐Nanowire‐Digital‐Alignment Technique and a One‐Step Reduction Process

A rapid, scalable, and designable approach to produce a cross-shaped memristor array is demonstrated using an inorganic-nanowire digital-alignment technique and a one-step reduction process. Two-dimensional arrays of perpendicularly aligned, individually conductive Cu-nanowires with a nanometer-scale Cux O layer sandwiched at each cross point are produced.