Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1983IEEE Electron Device Letters

Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (lt;1 percent/kh) at 70C

View Full Paper
Ask AI
Bookmark
Share

Authors

RDRussell D. DupuisGeorgia Institute of TechnologyRHR. L. HartmanPortland State UniversityFNF. R. NashLuna Innovations (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Dupuis et al. (1983) studied this question.

synapsesocial.com/papers/6a6f2c0bb27f15817826e469https://doi.org/10.1109/edl.1983.25735
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxy1982 · 303 citations
  2. 2Very narrow graded-barrier single quantum well lasers grown by metalorganic chemical vapor deposition1982 · 59 citations
  3. 3Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic-chemical vapor deposition1982 · 31 citations
  4. 4High Performance 880 nm (GaAl)As/GaAs Oxide Stripe Lasers with Very Low Degradation Rates at Temperatures up to 120°C1981 · 35 citations
  5. 5Room-temperature laser operation of quantum-well Ga(1−<i>x</i>)Al<i>x</i>As-GaAs laser diodes grown by metalorganic chemical vapor deposition1978 · 177 citations