A non-destructive characterization method for epitaxial wafers of vertical-cavity surface-emitting laser (VCSEL) before device processing, and a way for reproducible fabrication of the distributed Bragg reflector (DBR) using this method, are discussed. The DBR, active layer, and cavity length are successfully characterized by using YAG-laser-excited PL measurement and reflectivity-spectrum measurement. For a buried-heterostructure VCSEL, cavity length is evaluated by using a newly assembled small-area-spectral-reflectance measurement system. It is also shown that the cavity length can be tuned by using chemical etching.
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Okamoto et al. (1997) studied this question.
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