Data are presented on oxide-confined AlGaAs-GaAs-InGaAs VCSEL's that use high-index half-wave GaAs spacer layers and electronic tunnel injection and confinement. To our knowledge, this is the first demonstration of tunnel injection in a vertical-cavity laser. Threshold currents range from 344 μA for a 6.5-μm diameter device to 151 μA for a 1-μm diameter device. The relatively high threshold currents are attributed to a detuned cavity and higher order transverse-mode operation.
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Huffaker et al. (1997) studied this question.
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