The nature of dislocation sources in proton bombarded GaAs

The technique of transmission electron microscopy (TEM) has been applied to study the nature of damage rafts, which act as dislocation sources, in proton bombarded (5×1015, 1016 protons cm2) GaAs. The results show that the rafts consist of a planar array of voids lying on the {110} planes. The dislocations generated at these rafts are glissile, of the (a/2) <110> type and glide on the {111} planes intersecting the rafts.