Aging experiments of Zn-diffused GaAs injection lasers have been performed at liquid-nitrogen temperature. Results of degradation tests are consistent with the Kressel and Byer postulation that new nonradiative recombination centers are formed. Evidence of the formation of these new centers are deduced from measurements of the injected carrier lifetime which decreases during laser degradation. Variations of the external quantum efficiency and the threshold current correlate with the changes of the carrier lifetime.
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Edward S. Yang (1971) studied this question.
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