Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 11, 1988Applied Physics Letters

Epitaxial growth of GaAs/NiAl/GaAs heterostructures

View Full Paper
Ask AI
Bookmark
Share

Authors

TST. SandsJet Propulsion LaboratoryJHJ. P. HarbisonDartmouth CollegeWCW. K. ChanUnited States Naval Research Laboratory

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sands et al. (1988) studied this question.

synapsesocial.com/papers/6a6f2c8d2163a0a01bc3817ehttps://doi.org/10.1063/1.99162
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Structure and composition of NixGaAs1986 · 97 citations
  2. 2Hybridised sol-gel process for optical fibres1987 · 15 citations
  3. 3Heterojunction acoustic charge transport devices on GaAs1988 · 67 citations
  4. 4Stability and epitaxy of NiAl and related intermetallic films on III-V compound semiconductors1988 · 93 citations
  5. 5Co/GaAs interfacial reactions1987 · 70 citations