A low-noise line-amplified MOS imaging devices

A new MOS imaging device is proposed. It has an amplifier and a correlated double sampling (CDS) circuit at each vertical signal line and an off-chip smear differential gear. The 1/2-in image format, 500*485 pixels, is designed on 1.5- mu m CMOS technology, and its fundamental characteristics are analyzed. Random noise is 120 pA, and the aperture ratio is greater than 70%. The smear level is 100 dB. The fixed pattern noise is 2000 pA in the dark, 0.62% in light. Some advantages of this device include a 5-V power supply requirement, a high saturation current, a high signal-to-random-noise ratio, and a low smear level. However, the fixed pattern noise in the dark needs to be lowered for improved performance.>