ZnTe is deposited epitaxially by rf sputtering on the clean surface of GaAs(100) substrate from which the surface native oxides have been etched away by H 2 plasma treatment. The crystalline quality of ZnTe films, which depends on the substrate temperature, is evaluated by means of optical measurements and RHEED pattern observation. A ZnTe film prepared at a substrate temperature of 320°C is deposited epitaxially.
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Tokumitsu et al. (1989) studied this question.
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