High-voltage output driver circuits realized with double-implanted MOS (DIMOS) transistors are presented. Breakdown voltages exceed 100 V. Dynamic bootstrap techniques resulted in circuits combining low power (5 mW) and fast switching times (150 ns) at typical operating conditions of 5 V/50 V, 50 pF, and 16 kHz.
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Pomper et al. (1980) studied this question.
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