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October 1, 1960IRE Transactions on Electron Devices

Avalanche breakdown voltages of diffused silicon and germanium diodes

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Authors

CRC.D. RootRTX (United States)DLD. LiebBroad InstituteBJB. JacksonRTX (United States)

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Root et al. (1960) studied this question.

synapsesocial.com/papers/6a6f2d3e2163a0a01bc382cehttps://doi.org/10.1109/t-ed.1960.14690
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A theory of the electrical breakdown of solid dielectrics1934 · 1,425 citations
  2. 2Ionization Rates for Holes and Electrons in Silicon1957 · 271 citations
  3. 3Avalanche Breakdown in Germanium1955 · 376 citations
  4. 4Avalanche Breakdown Voltage in Silicon Diffused p-n Junctions as a Function of Impurity Gradient1956 · 22 citations
  5. 5Avalanche Breakdown in Silicon1954 · 481 citations