Using high-resolution medium-energy ion scattering, we have determined the surface As and Ga coverages of the c(4×{}4), c(2×{}8), (2×{}4), (2×{}6), and c(8×{}2) reconstructions of GaAs(001). All surfaces are more Ga rich than predicted by current structural models. The results are explained in terms of charge neutrality and Coulomb repulsion between As lone-pair orbitals, leading to As replacement by Ga in the first and second surface layers.
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Falta et al. (1993) studied this question.
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