Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1970Proceedings of the IEEE

X-band silicon TRAPATT diodes

View Full Paper
Ask AI
Bookmark
Share

Authors

RYR.S. YingShanxi University of Traditional Chinese MedicineNKN. B. KramerHRL Laboratories (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ying et al. (1970) studied this question.

synapsesocial.com/papers/6a6f2db878a11c550e08dc85https://doi.org/10.1109/proc.1970.7907
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Characterization of ion-implanted IMPATT oscillators1968 · 5 citations
  2. 2High-power, high-efficiency silicon avalanche diodes at ultra high frequencies1967 · 113 citations
  3. 3High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency1968 · 68 citations
  4. 4Negative resistance in p-n junctions under avalanche breakdown conditions, part II1966 · 131 citations
  5. 5A Proposed High-Frequency, Negative-Resistance Diode1958 · 557 citations